Device Design Guideline to Reduce the Threshold Voltage Variation with Fin Width in Junctionless MuGFETs
نویسندگان
چکیده
منابع مشابه
Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs
An analytical model of the threshold voltage variance induced by random dopant fluctuations (RDF) in junctionless (JL) FETs is derived for both cylindrical nanowire (NW) and planar double-gate (DG) structures considering only the device electrostatics in subthreshold. The model results are shown to be in reasonable agreement with TCAD simulations for different gate lengths and device parameters...
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ژورنال
عنوان ژورنال: Journal of the Korea Institute of Information and Communication Engineering
سال: 2014
ISSN: 2234-4772
DOI: 10.6109/jkiice.2014.18.1.135